A processing system herein includes a processing chamber, a metrology system, and a metrology source. The processing chamber includes a lid assembly, a substrate support assembly, a first wall, a second wall, a bottom, and a viewing port. The first wall, the second wall, and the bottom define a processing volume. The metrology system includes a translation stage and a collimator. The metrology source includes a radiation source and a spectrometer. A method herein includes disposing a substrate on a substrate support in a processing chamber; calculating a baseline reflectivity of the substrate; providing a precursor mixture to the processing chamber from the precursor mixture; forming a plasma in a the processing chamber from the precursor mixture; depositing a film on the substrate from the plasma; measuring a thickness of the film; detecting an endpoint of a deposition process; and stopping the deposition process.
- 출원번호 : US2024/046419
- 출원인 : APPLIED MATERIALS, INC.
- 특허번호 :
- IPC : H01L-021/02(2006.01);H01L-021/67(2006.01);H01J-037/32(2006.01);