A method and system for checking a gauge response is described. The method includes positioning samples with known profiles and uniform compositions between a radiation source and a subset of detectors in a detector array linearly arranged in a first direction. Sample signals are generated by irradiating the samples with radiation from the radiation source and detecting radiation transmitted through the samples and to the subset of detectors. The method includes inputting the sample signals into calibrations for each of the subset of detectors and each of the one or more samples, thereby determining values corresponding to each of the one or more samples and each of the subset of detectors. The method determines if the values corresponding to the one or more samples are consistent with the know values of the samples, and thereby provides an indication as to the state of calibration of the gauge.

• 출원번호 : US2024/043461
• 출원인 : THERMO EGS GAUGING LLC
• 특허번호 :
• IPC : G01T-007/00(2006.01)

A joined body 10 is produced by using, as an adhesive composition 14, a photocurable adhesive composition that contains a 2-cyanoacrylate compound, a group-8 transition metal metallocene compound, and a photoradical generator, and that has a viscosity of 40-5,000 mPa·s as measured at 25°C by an E-type viscometer, and using a production method comprising: a formation step for forming a state in which the adhesive composition 14 is disposed along a boundary portion 15 between a first adherend 11 and a second adherend 12 with the first adherend 11 and the second adherend 12 attached together by the adhesive composition 14 at an attachment portion 13 between the first adherend 11 and the second adherend 12; and a curing step for curing the adhesive composition 14 disposed along the boundary portion 15 by irradiation with actinic radiation.

• 출원번호 : JP2024/029884
• 출원인 : TOAGOSEI CO., LTD.
• 특허번호 :
• IPC : C09J-004/04(2006.01);C09J-011/06(2006.01);

A fabric includes a first flexible fabric layer, having fabric emissivity properties in a visible radiation range that are selected so as to mimic ambient emissivity properties of a deployment environment of the fabric, and at least one second flexible fabric layer, which is joined to the first flexible fabric layer, and which is configured to scatter long-wave radiation that is incident on the fabric. The first and second flexible fabric layers are perforated by a non-uniform pattern of perforations extending over at least a part of the fabric.

• 출원번호 : 18811968
• 출원인 : Morag, Elad
• 특허번호 :
• IPC : F41H-003/02(2006.01);B32B-005/02(2006.01);B32B-015/095(2006.01);B32B-015/14(2006.01);B32B-033/00(2006.01);B32B-038/00(2006.01);B32B-038/04(2006.01);B32B-043/00(2006.01);C03C-011/00(2006.01);C03C-017/06(2006.01);D03D-001/00(2006.01);D03D-013/00(2006.01);D03D-015/283(2006.01);D03D-015/41(2006.01);D03D-015/47(2006.01);

A method for isolating plastic products produced by polymerization of resin with proton beams is disclosed. The method comprises a liquid resin added with a reactive dye that changes from transparent or colorless to color when activated by the proton beam or the chemical polymerization process to reveal polymerization within a polymerizable resin. The change in color is correlated to the energy delivered to the resin by a proton beam, electromagnetic radiation, or heat. The reactive dye is placed into a plastic container. The proton beam is directed into the container to polymerize the resin. When irradiation is complete, the container of frozen resin is opened at the top and bottom and placed on top of the column of water containing a density gradient provided by dissolved salt. The partially cured product is fully cured while suspended in the density gradient by application of heat or ultraviolet radiation.

• 출원번호 : 18811853
• 출원인 : Parris, George Edward
• 특허번호 :
• IPC : C08K-003/30(2006.01)

InxAlyGa1-x-yN semiconductor structures having optoelectronic elements characterized by epitaxial layers having different in-plane a-lattice parameters and different InN mole fractions are disclosed. The active regions are configured to emit radiation in different wavelength ranges and are characterized by strain states within about 1% to 2% of compressive strain. The epitaxial layers are grown on patterned InxAlyGa1-x-yN seed regions on a single substrate, where the relaxed InGaN growth layers provide (0001) InxAlyGa1-x-yN growth surfaces characterized by different in-plane a-lattice parameters and different InN mole fractions. InxAlyGa1-x-yN semiconductor structures can be used in optoelectronic devices such as in light sources for illumination and in display applications.

• 출원번호 : 18812553
• 출원인 : KRAMES, MICHAEL R.
• 특허번호 :
• IPC : H01L-027/15(2006.01)

A method and system for checking a gauge response is described. The method includes positioning samples with known profiles and uniform compositions between a radiation source and a subset of detectors in a detector array linearly arranged in a first direction. Sample signals are generated by irradiating the samples with radiation from the radiation source and detecting radiation transmitted through the samples and to the subset of detectors. The method includes inputting the sample signals into calibrations for each of the subset of detectors and each of the one or more samples, thereby determining values corresponding to each of the one or more samples and each of the subset of detectors. The method determines if the values corresponding to the one or more samples are consistent with the know values of the samples, and thereby provides an indication as to the state of calibration of the gauge.

• 출원번호 : 18812779
• 출원인 : WATSON, Carter
• 특허번호 :
• IPC : G01N-023/04(2006.01)

An organotin photoresist composition for photolithography patterning is described, wherein organotin photoresist composition comprises a (stannocenyl oxide) tin compound, a solvent, and/or an additive. (Stannocenyl oxide) tin compound comprises cyclopentadienyl C5H5 group, or substituted cyclopentadienyl C5H4R, C5H3R2, C5H2R3, C5HR4, or C5R5 group. A method for photolithography patterning comprises depositing (stannocenyl oxide)tin compound photoresist composition over a substrate to form a photoresist layer; exposing the (stannocenyl oxide)tin photoresist layer to actinic radiation to form a latent pattern; and developing the latent pattern by applying a developer to remove the unexposed or exposed portion of photoresists to form a photolithography pattern.

• 출원번호 : 18812202
• 출원인 : Lu, Feng
• 특허번호 :
• IPC : G03F-007/004(2006.01);G03F-007/16(2006.01);

A method for isolating plastic products produced by polymerization of resin with proton beams is disclosed. The method comprises a liquid resin added with a reactive dye that changes from transparent or colorless to color when activated by the proton beam or the chemical polymerization process to reveal polymerization within a polymerizable resin. The change in color is correlated to the energy delivered to the resin by a proton beam, electromagnetic radiation, or heat. The reactive dye is placed into a plastic container. The proton beam is directed into the container to polymerize the resin. When irradiation is complete, the container of frozen resin is opened at the top and bottom and placed on top of the column of water containing a density gradient provided by dissolved salt. The partially cured product is fully cured while suspended in the density gradient by application of heat or ultraviolet radiation.

• 출원번호 : 18811853
• 출원인 : Parris, George Edward
• 특허번호 : 12275833
• IPC : C08K-003/30(2006.01);C08G-061/04(2006.01);

결합 친화성 및 종양 흡수가 향상된 인간화 모노클로날 항-핵 항체가 제시된다. 특히 바람직한 항체는 비-인간화 비-돌연변이 형태에 비하여 친화성이 최대 약 8배 개선된 H-CDR3의 위치-지정 돌연변이체이다. 추가의 바람직한 양태에서, 이러한 인간화 항체는 면역 조절제, 면역 이펙터 및 다른 치료제 또는 진단제의 종양 괴사 표적화된 전달에 사용된다.

• 출원번호 : 10-2024-7027978
• 출원인 : 캔서 테라퓨틱스 래버러토리즈 인코포레이티드
• 특허번호 :
• IPC : C07K-016/44;A61K-039/00;A61K-047/68;A61K-051/10;

A catalyst material and method for making the catalyst material are provided. An exemplary catalyst material includes 15 wt.% to 99 wt.% of a catalyst having the formula: MoV(M)(M)O, and 1 wt.% to 45 wt.% of a bismuth-containing compound. In this formula, M is Bi, Te, Sb, or a mixture thereof; M is Ta, Nb, or a mixture thereof; a is 1.0; b is 0.01 to 0.5; c is 0.005 to 0.2; d is 0.005 to 0.1; and x is the number of oxygen atoms necessary to render the catalyst electrically neutral. The values a, b, c, and d are determined based on the amount of each starting material used to form the catalyst. The catalyst material has a PXRD pattern including peaks at 2θ values of 12.6° ± 0.2°, 18.0° ± 0.2°, 27.9° ± 0.2°, and 29.1° ± 0.2°, wherein the PXRD pattern is obtained using Cu Kα radiation.

• 출원번호 : IB2024/058134
• 출원인 : NOVA CHEMICALS (INTERNATIONAL) S.A.
• 특허번호 :
• IPC : B01J-023/00(2006.01);B01J-023/18(2006.01);B01J-023/20(2006.01);B01J-023/22(2006.01);B01J-023/28(2006.01);B01J-023/32(2006.01);C07C-005/48(2006.01);