A method for forming ultraviolet (UV) radiation responsive metal-oxide containing film is disclosed. The method may include, depositing an UV radiation responsive metal oxide-containing film over a substrate by, heating the substrate to a deposition temperature of less than 400° C., contacting the substrate with a first vapor phase reactant comprising a metal component, a hydrogen component, and a carbon component, and contacting the substrate with a second vapor phase reactant comprising an oxygen containing precursor, wherein regions of the UV radiation responsive metal oxide-containing film have a first etch rate after UV irradiation and regions of the UV radiation responsive metal oxide-containing film not irradiated with UV radiation have a second etch rate, wherein the second etch rate is different from the first etch rate.
- 출원번호 : 19327367
- 출원인 : Huotari, Hannu
- 특허번호 :
- IPC : H01L-021/02(2006.01);C23C-016/40(2006.01);C23C-016/455(2006.01);C23C-016/56(2006.01);H01L-021/033(2006.01);H01L-021/3213(2006.01);