A method for forming a pattern on a substrate disclosed. The method comprising, providing an Extreme Ultraviolet (EUV) lithography system having an exposure chamber, providing a substrate to the exposure chamber, the substrate comprising a patternable layer, the patternable layer comprising a photosensitive surface termination; and exposing the substrate to EUV radiation while exposing the patternable layer to a reactive gas, thereby forming a pattern on the patternable layer, comprising exposed areas and unexposed areas, the unexposed areas comprising the photosensitive surface termination and the exposed areas comprising an altered surface termination.
- 출원번호 : 18900231
- 출원인 : Patel, Kishan Ashokbhai
- 특허번호 :
- IPC : G03F-007/00(2006.01);C23C-016/24(2006.01);C23C-016/455(2006.01);G03F-007/16(2006.01);H01L-021/033(2006.01);